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TYPICAL PERFORMANCE CURVES (R)
APT60GT60JRDQ3 600V
APT60GT60JRDQ3
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 100KHz * Ultra Low Leakage Current
E G C
E
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT60GT60JRDQ3 UNIT Volts
600 30 105 48 360 360A @ 600V 379 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 330A) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX Units
600 3 4 2.0 2.8 330
2
5 2.5
Collector-Emitter On Voltage (VGE = 15V, I C = 60A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 60A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
Gate-Emitter Leakage Current (VGE = 20V)
100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
052-6260
APT Website - http://www.advancedpower.com
Rev A
10-2005
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C)
A
2500
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT60GT60JRDQ3
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 60A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V RG = 4.3 I C = 60A VGE = 15V MIN TYP MAX UNIT pF V nC
3100 390 185 7.5 290 20 130 360 17 34 235 26 1265 1505 1200 17 34 260 60 1285 2135 1705 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V RG = 4.3 I C = 60A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.33 .60 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.)
10-2005
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6260
Rev A
TYPICAL PERFORMANCE CURVES
180 160 IC, COLLECTOR CURRENT (A) 140 120 100 80 60 40 20 0
V
GE
= 15V
300 250 200 150 100 50 0
APT60GT60JRDQ3
15V 13V 11V 10V
9V 8V 7V
TC = 25C
TC = 125C
IC, COLLECTOR CURRENT (A)
TC = -55C
6V
180 160 IC, COLLECTOR CURRENT (A) 140 120 100
FIGURE 1, Output Characteristics(VGE = 15V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ = -55C
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 60A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 120V VCE = 300V
TJ = 25C
80 60 40 20 0
8 6 4 2 0 VCE = 480V
TJ = 125C
0
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
50
100 150 200 GATE CHARGE (nC)
FIGURE 4, Gate Charge
250
300
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
IC = 120A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 120A
IC = 60A IC = 30A
IC = 60A IC = 30A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
0
6
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
140
0
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10
120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 10-2005 052-6260 Rev A
(NORMALIZED)
25 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
350 300 250 200 150 100 50 0
VCE = 400V RG = 4.3 L = 100H VGE =15V,TJ=25C
APT60GT60JRDQ3
20
VGE = 15V
15
VGE =15V,TJ=125C
10
5 VCE = 400V
100 120 140 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
0
TJ = 25C, or 125C RG = 4.3 L = 100H
80 100 120 140 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 120 100 80 60 40 20 0
TJ = 25C, VGE = 15V
TJ = 125C, VGE = 15V
RG = 4.3, L = 100H, VCE = 400V
100
RG = 4.3, L = 100H, VCE = 400V
80 tf, FALL TIME (ns)
TJ = 25 or 125C,VGE = 15V
tr, RISE TIME (ns)
60
40
20
100 120 140 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
0
100 120 140 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000
7000 EON2, TURN ON ENERGY LOSS (J) 6000 5000 4000 3000 2000 1000 0
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
3500 3000 2500 2000 1500 1000 500 0
V = 400V CE V = +15V GE R = 4.3
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
100 120 140 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
80 100 120 140 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 7000
= 400V V CE = +15V V GE R = 4.3
G
12000 SWITCHING ENERGY LOSSES (J) 10000 8000 6000 4000 2000 0
0
SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
J
6000 5000 4000 3000 2000 1000 0 0
Eon2,120A
Eoff,120A
Eon2,120A
Eoff,120A
10-2005
Eoff,60A Eoff,30A
Eon2,60A
Eon2,60A Eoff,30A Eon2,30A
Eoff,60A
Rev A
Eon2,30A
052-6260
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
5,000 Cies IC, COLLECTOR CURRENT (A)
400 350 300 250 200 150 100 50
APT60GT60JRDQ3
C, CAPACITANCE ( F)
P
1,000
500 Coes
Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.35 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 0.3 SINGLE PULSE 0.1 0.05 10-5 10-4
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
120 FMAX, OPERATING FREQUENCY (kHz)
50
TJ (C)
0.136 Dissipated Power (Watts) 0.0078 0.285 4.38 0.151
TC (C)
0.0434
10 5
T = 125C J T = 75C C D = 50 % V = 400V CE R = 4.3
G
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
ZEXT
Figure 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10
20
052-6260
Rev A
10-2005
APT60GT60JRDQ3
Gate Voltage
APT60DQ60
10% TJ = 125C td(on) 90% tr
V CC
IC
V CE
Collector Current
5%
5% 10% CollectorVoltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
td(off) 90%
Gate Voltage
TJ = 125C
CollectorVoltage tf 10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6260
Rev A
10-2005
TYPICAL PERFORMANCE CURVES
APT60GT60JRDQ3
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 92C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 60A Forward Voltage IF = 120A IF = 60A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT60GT60JRDQ3 UNIT Amps
60 79 600
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 1.8 2.2 1.9
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.7 0.40 0.30 0.20 0.10 0 10-5 0.5 0.3 0.1 0.05 10-4 SINGLE PULSE
Note:
160 70 100 4 140 690 9 80 1540 31 -
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
D = 0.9
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
0.159 Dissipated Power (Watts) 0.0056 0.0850 0.490 0.255
ZEXT
0.186
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6260
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Rev A
10-2005
TC (C)
200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 175C TJ = 125C TJ = -55C TJ = 25C
160 140 120 100 80 60 40 20 120A
APT60GT60JRDQ3
T = 125C J V = 400V
R
60A 30A
0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 2500 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 400V
R
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 60 50 120A 40 30 20 10 0
T = 125C J V = 400V
R
0
2000 60A 1500
120A
1000 30A 500
60A 30A
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 0.2 0.0
0
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 100
Duty cycle = 0.5 T = 175C
J
trr
Qrr
80
IF(AV) (A)
IRRM trr
60
40
Qrr
20
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
600 CJ, JUNCTION CAPACITANCE (pF) 500 400 300 200 100 0
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
Rev A
10-2005
052-6260
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT60M75L2LL
APT60GT60JRDQ3
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
10-2005 052-6260 Rev A
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5 ,045,903 5 ,089,434 5 ,182,234 5 ,019,522
Dimensions in Millimeters and (Inches)
,503,786 5 ,256,583 4 ,748,103 5 ,283,202 5 ,231,474 5 ,434,095 5 ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ll 5,262,336 6

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